Title :
High voltage distributed amplifier
Author :
Willems, D. ; Bahl, I. ; Wirsing, K.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
Measured results are presented for a novel distributed amplifier which uses voltage supplies of four to six times that of a typical FET amplifier, gives multioctave bandwidth and small size. Additionally, this amplifier consumes no more DC power than an amplifier operating at a 2-3 V bias and it can be readily produced in the MMIC configuration.
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power integrated circuits; wideband amplifiers; 4 to 13 GHz; FET amplifier; HV broadband amplifier; MMIC configuration; SHF; distributed amplifier; multioctave bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911467
