Title :
20 Gbit/s AlGaAs/GaAs HBT decision circuit IC
Author :
Runge, K. ; Gimlett, J.L. ; Nubling, R.B. ; Wang, K.C. ; Chang, M.F. ; Pierson, R.L. ; Asbeck, P.M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
An experimental 20 Gbit/s decision circuit IC based on AlGaAs/GaAs HBTs, has been implemented, which features a differential input sensitivity of 80 mV peak to peak and a phase margin of 292 degrees at the SONET STS-192 rate of 9.95 Gbit/s. The IC nominally dissipates 870 mW of power, but may be operated up to 10 Gbit/s with a power dissipation of 450 mW. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1.15*1 mm2.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 20 Gbit/s; 450 to 870 mW; 9.905 Gbit/s; AlGaAs-GaAs; HBT decision circuit IC; SONET STS-192 rate; baseline HBT technology; high current gain; optical fibre transmission; optical ring networks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911471
