Title :
High performance planar GaAs/Al0.3Ga0.7As Schottky barrier photodetector grown on Si substrates by molecular beam epitaxy
Author :
Tzeng, Y.C. ; Li, S.S. ; Peng, C.K. ; Kao, Y.C.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A high-speed and high sensitivity planar GaAs/Al0.3Ga0.7As heterostructure Schottky barrier photodiode grown on p-type silicon substrate by molecular beam epitaxy (MBE) has been studied. Growth of a thermally strained superlattice (TSL) buffer layer enables the fabrication of high performance GaAs Schottky photodiodes on silicon substrate. A reverse leakage current of 9*10-10 A was obtained at -5 V. The detector responsivity and quantum efficiency measured at 0.84 mu m were found to be 0.25 A/W and 327.5%, respectively. The response speed of this photodiode measured by the impulse response method, has a 70 ps risetime and a 3 dB bandwidth of 5 GHz.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; molecular beam epitaxial growth; photodetectors; photodiodes; 0.84 micron; 37.5 percent; 5 GHz; 70 ps; Al 0.3Ga 0.7As-GaAs-Si; MBE; Schottky barrier photodetector; Si substrates; buffer layer; heterostructure; high sensitivity; high-speed; molecular beam epitaxy; p-type; photodiodes; planar device; quantum efficiency; thermally strained superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911473
