Title :
10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure
Author :
Yashiki, Kenichiro ; Kato, Tomoaki ; Chida, Hiroaki ; Tsuruoka, Kiyotaka ; Kobayashi, Ryuji ; Sudo, Shinya ; Sato, Kenji ; Kudo, Koji
Author_Institution :
NEC Corp., Chiba, Japan
Abstract :
We have developed a 1310-nm uncooled electroabsorption modulator integrated light source (EML) with an AlGaInAs multiple quantum well (MQW) active/absorption stripe, which was simultaneously grown using the narrow-stripe selective MOVPE technique and was buried with an Fe-doped InP. The Al-content MQW oxidation was effectively inhibited by using the same technique. An experiment-based evaluation of the device´s performance revealed that by only changing the modulation bias voltage linearly with temperature, it was possible to achieve 10-Gb/s penalty-free operation at up to 85°C over a 23-km single-mode fiber.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; iron; optical communication equipment; optical fibre communication; oxidation; quantum well lasers; vapour phase epitaxial growth; 10 Gbit/s; 1310 nm; 23 km; 85 degC; Al-content oxidation; AlGaInAs; AlGaInAs multiple quantum well; Fe-doped InP; InP:Fe; MQW oxidation; electroabsorption modulator; integrated light source; modulation bias voltage; multiple quantum well absorption stripe; multiple quantum well active stripe; narrow-stripe selective MOVPE; penalty-free operation; semiinsulating BH structure; single-mode fiber; uncooled EML; Absorption; Epitaxial growth; Epitaxial layers; Indium phosphide; Light sources; Optical modulation; Oxidation; Quantum well devices; Temperature; Voltage; Distributed feedback laser diodes (DFB-LDs); electroabsorption (EA) modulator; oxidation free; selective metal-organic vapor-phase epitaxy (MOVPE);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860042
