Title :
27 Gbit/s AlGaAs/GaAs HBT 1:2 regenerating demultiplexer IC
Author :
Runge, K. ; Gimlett, J.L. ; Nubling, R.B. ; Wang, K.C. ; Chang, M.F. ; Pierson, R.L. ; Asbeck, P.M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
An experimental 27 Gbit/s 1:2 regenerating demultiplexer IC based on AlGaAs/GaAs HBTs has been implemented, which features an input sensitivity of 55 mV peak to peak and a phase margin of 270 degrees at the SONET STS-192 rate of 9.95 Gbit/s. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1.15*1 mm2.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital communication systems; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; multiplexing equipment; optical communication equipment; 27 Gbit/s; 9.905 Gbit/s; AlGaAs-GaAs; SONET STS-192 rate; baseline HBT technology; high current gain; regenerating demultiplexer IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911478
