Title :
Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE
Author :
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Fullowan, T.R. ; Lothian, J.R. ; Wisk, P.W. ; Chen, Y.K. ; Hobson, W.S. ; Smith, P.R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
High performance, selfaligned processed npn and pnp AlGaAs/GaAs HBTs grown by MOMBE are reported. Tin and carbon were used as n- and p-type dopants, respectively. Cutoff frequency and maximum frequency of oscillation of 53 and 128 GHz, respectively, were obtained for npn transistors (2*5 mu m2 emitter) and values of 30 and 12 GHz, respectively, were measured for pnp transistors (2*4 mu m2 emitter).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; solid-state microwave devices; 12 to 128 GHz; AlGaAs-GaAs; C dopant; HBTs; MOMBE; Sn dopant; n-p-n devices; n-type dopant; p-n-p devices; p-type dopants; selfaligned processed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911479
