Title :
MOSFET degradation kinetics and its simulation
Author :
Penzin, Oleg ; Haggag, A. ; McMahon, W. ; Lyumkis, Eugeny ; Hess, K.
Author_Institution :
Integrated Syst. Eng., San Jose, CA, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
In this work, the time-dependence of Si/SiO2 interface trap formation is considered by solving an improved set of Si-H defect kinetics equations that take into account interface disorder and the Si-H bond activation energy evolution as the bonds are broken. This model is applied to the simulation of metal oxide semiconductor field effect transistor (MOSFET) high field and hot carrier degradation, and then verified with various experimental data. An estimation of the potential barrier of the Si/SiO2 interface is given.
Keywords :
MOSFET; dangling bonds; high field effects; hot carriers; interface states; semiconductor device models; semiconductor device reliability; semiconductor-insulator boundaries; silicon; silicon compounds; MOSFET degradation kinetics; MOSFET degradation simulation; Si-H bond activation energy evolution; Si-H defect kinetics equations; Si-SiO2; Si/SiO2 interface trap formation; high field degradation; hot carrier degradation; interface disorder; potential barrier; time-dependence; Bonding; Degradation; Equations; FETs; Hot carriers; Hydrogen; Kinetic theory; MOSFET circuits; Modeling; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.813333
