DocumentCode :
745036
Title :
An artificial fingerprint device (AFD): a study of identification number applications utilizing characteristics variation of polycrystalline silicon TFTs
Author :
Maeda, Shigenobu ; Kuriyama, Hirotada ; Ipposhi, Takashi ; Maegawa, Shigeto ; Inoue, Yasuo ; Inuishi, Masahide ; Kotani, Norihiko ; Nishimura, Tadashi
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Volume :
50
Issue :
6
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
1451
Lastpage :
1458
Abstract :
An idea for obtaining unique identification (ID) numbers using polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a logic LSI compatible process is proposed. Like an actual human fingerprint, the characteristic variations of poly-Si TFTs are utilized for ID numbers in LSIs. The variation of poly-Si TFT characteristics is random, and this method offers unique, nonalterable, and nonduplicable numbers without any special processes, unlike other methods such as flash memory and mask ROM. These characteristics are highly suitable for ID number applications. The device physics of poly-Si TFTs for realizing the stable recognition of ID numbers was studied and a recognition circuit is proposed. The design guidelines for the grain size of poly-Si and AFD applications are also discussed.
Keywords :
CMOS logic circuits; VLSI; elemental semiconductors; fingerprint identification; grain size; identification technology; large scale integration; random number generation; security; silicon; thin film transistors; ID number applications; Si; artificial fingerprint device; chip ID numbers; chip identification; design guidelines; grain size; identification number applications; logic LSI compatible process; nonalterable ID numbers; nonduplicable ID numbers; poly-Si thin-film transistors; polycrystalline silicon TFTs; polysilicon TFTs; system LSIs; Circuits; Fingerprint recognition; Flash memory; Humans; Large scale integration; Logic devices; Physics; Read only memory; Silicon; Thin film transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.808526
Filename :
1213816
Link To Document :
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