• DocumentCode
    745036
  • Title

    An artificial fingerprint device (AFD): a study of identification number applications utilizing characteristics variation of polycrystalline silicon TFTs

  • Author

    Maeda, Shigenobu ; Kuriyama, Hirotada ; Ipposhi, Takashi ; Maegawa, Shigeto ; Inoue, Yasuo ; Inuishi, Masahide ; Kotani, Norihiko ; Nishimura, Tadashi

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    1451
  • Lastpage
    1458
  • Abstract
    An idea for obtaining unique identification (ID) numbers using polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a logic LSI compatible process is proposed. Like an actual human fingerprint, the characteristic variations of poly-Si TFTs are utilized for ID numbers in LSIs. The variation of poly-Si TFT characteristics is random, and this method offers unique, nonalterable, and nonduplicable numbers without any special processes, unlike other methods such as flash memory and mask ROM. These characteristics are highly suitable for ID number applications. The device physics of poly-Si TFTs for realizing the stable recognition of ID numbers was studied and a recognition circuit is proposed. The design guidelines for the grain size of poly-Si and AFD applications are also discussed.
  • Keywords
    CMOS logic circuits; VLSI; elemental semiconductors; fingerprint identification; grain size; identification technology; large scale integration; random number generation; security; silicon; thin film transistors; ID number applications; Si; artificial fingerprint device; chip ID numbers; chip identification; design guidelines; grain size; identification number applications; logic LSI compatible process; nonalterable ID numbers; nonduplicable ID numbers; poly-Si thin-film transistors; polycrystalline silicon TFTs; polysilicon TFTs; system LSIs; Circuits; Fingerprint recognition; Flash memory; Humans; Large scale integration; Logic devices; Physics; Read only memory; Silicon; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.808526
  • Filename
    1213816