Title :
Role of scattering in nanotransistors
Author :
Svizhenko, Alexei ; Anantram, M.P.
Author_Institution :
NASA Ames Res. Center, Moffett Field, CA, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
We model the influence of scattering along the channel and extension regions of dual gate nanotransistors. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. This is in contrast to a popular belief that scattering in the source end of a nanotransistor is significantly more detrimental to the drive current than scattering elsewhere. As the channel length becomes much larger than the scattering length, scattering in the drain-end is less detrimental to the drive current than scattering near the source-end of the channel. Finally, we show that for nanotransistors, the classical picture of modeling the extension regions as simple series resistances is not valid.
Keywords :
MOSFET; contact resistance; elemental semiconductors; leakage currents; nanoelectronics; scattering; semiconductor device models; silicon; Si; channel region; drain current reduction; dual gate MOSFET; dual gate nanotransistors; extension regions; leakage currents; modeling; scattering length; scattering role; Contact resistance; Electromagnetic scattering; Electrostatics; Equations; FETs; Lithography; MOSFETs; Particle scattering; Physics; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.813503