• DocumentCode
    745116
  • Title

    Channel width dependence of NMOSFET hot carrier degradation

  • Author

    Li, Erhong ; Prasad, Sharad

  • Author_Institution
    Res. & Dev. Center, LSI Logic, Milpitas, CA, USA
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    1545
  • Lastpage
    1548
  • Abstract
    The channel width dependence of hot carrier reliability on NMOSFETs from 0.4-μm to 0.13-μm technology has been studied at both Ib,peak and Vg = Vd conditions. Enhanced degradation on narrow width devices happens on most technologies. The Ib/Id value and vertical electric field are proposed to be the reasons for enhanced degradation on narrow width NMOSFETs.
  • Keywords
    MOSFET; hot carriers; semiconductor device reliability; 0.4 to 0.13 micron; NMOSFET; channel width dependence; device degradation; hot carrier reliability; vertical electric field; Degradation; Electron traps; Hot carriers; Impact ionization; Isolation technology; MOSFET circuits; Stress; Testing; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.813342
  • Filename
    1213830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745116