• DocumentCode
    745128
  • Title

    Diffusion coefficient of B in HfO2

  • Author

    Suzuki, Kunihiro ; Tashiro, Hiroko ; Morisaki, Yusuke ; Sugita, Yoshihiro

  • Author_Institution
    Fujitsu Labs. Ltd., Kanagawa, Japan
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    1550
  • Lastpage
    1552
  • Abstract
    We implanted B ions in a 110-nm-thick HfO2 layer, subjected the substrates to various thermal processes, and evaluated the diffusion coefficient by comparing experimental and numerical data. We found that the diffusion coefficient of B in HfO2 is higher than that in SiO2 by about four orders and almost the same as that in Si. Therefore, the penetration of B through this layer can be expected to be significant, making the use of a cover layer indispensable for p+ polycrystalline silicon gate devices.
  • Keywords
    boron; diffusion; hafnium compounds; insulating thin films; 110 nm; B diffusion coefficient; HfO2:B; insulating film; penetration; Analytical models; Dielectric substrates; Electron traps; Hafnium oxide; Leakage current; MOSFET circuits; Moon; Silicon; Stress; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.813328
  • Filename
    1213832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745128