Title :
A study on the transient effect due to hydrogen passivation in InGaP HBTs
Author :
Deng, Shao-You ; Wu, Chang-Han ; Lee, Joseph Ya-Min
Author_Institution :
Dept. of Electr. Eng., Tsing-Hua Univ., Hsinchu, Taiwan
fDate :
6/1/2003 12:00:00 AM
Abstract :
The transient effect of InGaP heterojunction bipolar transistors is studied. The current gain increases with V/sub BE/ bias and becomes stable after several sweeps. The time to reach steady state depends on the collector current I/sub C/ and the ambient temperature. A new electrical method was introduced to calculate the passivation ratio, which is defined as the number of donor hydrogen (H/sup +/) atoms divided by the number of negatively charged carbon atoms (C/sup -/) in the heavily doped base layer. A passivation ratio of 69.98% obtained by this method agrees very well with that measured by secondary ion mass spectrometry of 69%.
Keywords :
III-V semiconductors; carbon; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; hydrogen; indium compounds; passivation; transient analysis; C; H; H passivation; InGaP; InGaP HBTs; collector current; current gain; electrical method; heavily doped base layer; heterojunction bipolar transistors; passivation ratio determination; transient analysis; transient effect; Atomic layer deposition; Atomic measurements; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Mass spectroscopy; Passivation; Temperature dependence; Thermal degradation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.813360
