Device performance improvement of InGaP/InGaAs doped-channel FETs

Author

Chien, Feng-Tso ; Yin, Jin-Mu ; Chiu, Hsien-Chin ; Chan, Yi-Jen

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

26

Issue

12

fYear

2005

Firstpage

861

Lastpage

863

Abstract

Partial drain/source ohmic recess InGaP/InGaAs/GaAs doped-channel field-effect transistors (OR-DCFETs) are proposed and fabricated in this study. The proposed ohmic recess process reduces the parasitic ohmic alloyed resistance caused by the undoped Schottky layer and therefore improves the device performance in terms of dc and source resistance, as well as RF characteristics. We compare the proposed devices with the DCFETs using the conventional process by means of experiments, where the Yang-Long method is used to analyze the effect of parasitic source resistances.

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; gallium compounds; indium compounds; InGaP-InGaAs-GaAs; OR-DCFET; RF characteristics; Yang-Long method; dc resistance; doped-channel FET; ohmic recess doped-channel field-effect transistors; parasitic ohmic alloyed resistance; parasitic source resistance; partial drain-source ohmic recess; undoped Schottky layer; Breakdown voltage; Current density; Etching; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Ohmic contacts; Photonic band gap; Doped-channel field-effect transistors (DCFETs); InGaP–InGaAs; ohmic recess; source and drain resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.859644

Filename

1546134