Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs

Author

Kilchytska, V. ; Levacq, D. ; Lederer, D. ; Raskin, J.P. ; Flandre, D.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

Volume

24

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

414

Lastpage

416

Abstract

This paper investigates the influence of the silicon substrate on the ac characteristics of silicon-on-insulator (SOI) MOSFETs. It is shown for the first time that the presence of the substrate underneath the buried oxide results in two transitions (i.e., zero-pole doublets) in the frequency response of the output conductance. It is demonstrated that the appearance of these transitions, the position and amplitude of which strongly depend on the substrate doping, is caused by the variation of the potential at substrate-buried oxide interface, which we call the Floating Effective Back-Gate (FEBG) effect. A first-order small-signal equivalent circuit is proposed to support our observations.

Keywords

MOSFET; equivalent circuits; frequency response; microwave field effect transistors; semiconductor device models; silicon-on-insulator; 2-D numerical simulations; SOI MOSFETs; Si; ac characteristics; buried oxide; first-order small-signal equivalent circuit; floating effective back-gate effect; frequency response; microwave functions; output conductance; silicon substrate; small-signal output conductance; substrate doping; substrate-buried oxide interface; transitions; zero-pole doublets; Circuit simulation; Conducting materials; Doping; Equivalent circuits; Frequency response; Laboratories; MOSFETs; Nanoscale devices; Silicon on insulator technology; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.813373

Filename

1213874