Title :
15 Gbit/s integrated laser diode driver using 0.3 mu m gate length quantum well transistors
Author :
Wang, Zhan-Guo ; Berroth, Manfred ; Nowotny, U. ; Gotzeina, W. ; Hofmann, P. ; Hulsmann, A. ; Kaufel, G. ; Kohler, Klaus ; Raynor, B. ; Schneider, Jurgen
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
An integrated laser diode driver was realised using enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.
Keywords :
III-V semiconductors; aluminium compounds; driver circuits; gallium arsenide; high electron mobility transistors; optical communication equipment; semiconductor junction lasers; semiconductor quantum wells; 0.3 micron; 10 to 15 Gbit/s; 25 mA; 45 mA; AlGaAs-GaAs; enhancement-depletion recessed-gate devices; fully-open eye diagrams; gate length quantum well transistors; integrated laser diode driver; modulation current; power consumption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920138
