Title :
Zero bias resonant tunnel Schottky contact diode for wide-band direct detection
Author :
Chahal, Prem ; Morris, Frank ; Frazier, Gary
Author_Institution :
Raytheon, Adv. Products Center, Dallas, TX, USA
Abstract :
A Schottky-collector resonant tunnel diode detector has been fabricated and characterized at zero bias up to 400 GHz. General device structure and fabrication are discussed, and small-signal equivalent models are presented for different diode areas. Over the measured range of 200 to 400 GHz using a monolithic antenna structure, noise equivalent power values between 3-8 pW/Hz12/ are achieved. The current-voltage characteristics of the diode show weak temperature dependence over a measured range of 213-323 K.
Keywords :
Schottky diodes; millimetre wave detectors; resonant tunnelling diodes; semiconductor device models; submillimetre wave detectors; 200 to 400 GHz; 213 to 323 K; Schottky-collector resonant tunnel diode detector; millimeter wave detectors; monolithic antenna structure; small-signal equivalent models; submillimeter wave detectors; wide-band direct detection; zero bias resonant tunnel Schottky contact diodes; Antenna measurements; Current-voltage characteristics; Envelope detectors; Fabrication; Noise measurement; Power measurement; Resonant tunneling devices; Schottky barriers; Schottky diodes; Wideband; Imaging; millimeter wave; noise equivalent power (NEP); resonant tunnel diode; submillimeter wave; terahertz; video detector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.859622
