DocumentCode
745528
Title
Calculation of phase distortion due to tunnel injection in heterojunction IMPATTs
Author
Dash, G.N. ; Pati, S.P.
Author_Institution
Dept. of Phys., Sambalpur Univ., India
Volume
28
Issue
3
fYear
1992
Firstpage
241
Lastpage
243
Abstract
A computer simulation method is suggested which uses the microwave negative resistance distribution profile within the depletion layer of an ATT device to calculate the phase distortion due to tunnel injected current. The method has been applied to explain the deterioration of device performance in GaAs/GaInAs heterostructure IMPATTs for high frequency operation.
Keywords
III-V semiconductors; IMPATT diodes; digital simulation; gallium arsenide; indium compounds; negative resistance; tunnel diodes; GaAs-GaInAs; computer simulation method; depletion layer; device performance; heterojunction IMPATTs; high frequency operation; microwave negative resistance distribution profile; phase distortion; tunnel injection;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920149
Filename
121400
Link To Document