Title :
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique
Author :
Reggiani, Susanna ; Gnani, Elena ; Rudan, Massimo ; Baccarani, Giorgio ; Bychikhin, Sergey ; Kuzmik, Jan ; Pogany, Dionyz ; Gornik, Erich ; Denison, Marie ; Jensen, Nils ; Groos, Gerhard ; Stecher, Matthias
Author_Institution :
Dept. of Electron., Univ. of Bologna, Italy
Abstract :
Two different protection diodes are investigated with electrothermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and space distribution of temperature is obtained up to 1100 K.
Keywords :
electrostatic discharge; p-n junctions; phase shifting interferometry; semiconductor device models; semiconductor diodes; temperature distribution; transient analysis; electrostatic discharge devices; electrothermal effects; electrothermal simulation; high-current pulses; impact ionization; nonequilibrium Auger effect; optical phase shifts; p-n junction; prediction capability; protection diodes; semiconductor device modeling; temperature distribution; thermal failure; thermal mapping; thermo-optic effects; transient interferometric technique; Diodes; Electrostatic discharge; Electrostatic interference; Electrothermal effects; Optical interferometry; Phase shifting interferometry; Predictive models; Protection; Temperature distribution; Transient analysis; Electrostatic discharge (ESD); electrothermal effects; impact ionization; nonequilibrium Auger effect; semiconductor device modeling; thermal mapping; thermo-optic effects;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.859685
