Title :
Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
Author :
Lu, Tsung Yi ; Chao, Tien Sheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2005 12:00:00 AM
Abstract :
A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (GM) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the GM of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the GM further to 29% more than the single-poly-Si gate structure without SiN capping layer.
Keywords :
MOSFET; electron mobility; interface phenomena; semiconductor technology; stress control; SiN; SiN capping layer; capping nitride; local strain channel nMOSFET; mobility enhancement; single-poly-Si gate structure; stacked a-Si gate; stacked poly-Si gate; stress control technique; transconductance; Capacitive sensors; Degradation; Etching; Fabrication; Germanium silicon alloys; MOSFETs; Silicon compounds; Silicon germanium; Stress; Tensile strain; Mobility; nMOSFET; poly-Si; strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.845499
