• DocumentCode
    745686
  • Title

    Radiation hardening of power MOSFETs using electrical stress

  • Author

    Stojadinovic, N. ; Djoric-Veljkovic, S. ; Manic, I. ; Davidovic, V. ; Golubovic, S.

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    38
  • Issue
    9
  • fYear
    2002
  • fDate
    4/25/2002 12:00:00 AM
  • Firstpage
    431
  • Lastpage
    432
  • Abstract
    The effects of pre-irradiation gate bias stress on the radiation response of power VDMOSFETs are presented, clearly demonstrating the inapplicability of gate bias stressing as a technique for radiation hardening of power MOSFETs
  • Keywords
    carrier mobility; interface states; power MOSFET; radiation hardening (electronics); gate bias stressing technique; interface traps; irradiation-induced threshold voltage shift; mobility; oxide-trapped charge; power MOSFETs; power VDMOSFETs; pre-irradiation gate bias stress; radiation hardening; radiation response;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020281
  • Filename
    1001556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745686