Title :
Radiation hardening of power MOSFETs using electrical stress
Author :
Stojadinovic, N. ; Djoric-Veljkovic, S. ; Manic, I. ; Davidovic, V. ; Golubovic, S.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
4/25/2002 12:00:00 AM
Abstract :
The effects of pre-irradiation gate bias stress on the radiation response of power VDMOSFETs are presented, clearly demonstrating the inapplicability of gate bias stressing as a technique for radiation hardening of power MOSFETs
Keywords :
carrier mobility; interface states; power MOSFET; radiation hardening (electronics); gate bias stressing technique; interface traps; irradiation-induced threshold voltage shift; mobility; oxide-trapped charge; power MOSFETs; power VDMOSFETs; pre-irradiation gate bias stress; radiation hardening; radiation response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020281
