Title :
Laterally Actuated Platinum-Coated Polysilicon NEM Relays
Author :
Parsa, Roozbeh ; Lee, Woo Seung ; Shavezipur, M. ; Provine, J. ; Maboudian, Roya ; Mitra, Subhasish ; Wong, H.-S. Philip ; Howe, R.T.
Author_Institution :
Texas Instrum., Santa Clara, CA, USA
Abstract :
Laterally actuated polycrystalline silicon nanoelectromechanical (NEM) relays with enhanced electrical properties are presented. Due to surface oxidation of polysilicon in room ambient conditions, the relays have a high contact resistance (> 1 GΩ) that requires high drain bias (3-5 V) to break through. The addition of a platinum sidewall coating reduces the on-resistance and the required drain bias to as low as 3 kΩ and 0.1 V, respectively. The platinum coating´s stability is demonstrated by two tests: first, a contact-and-hold test where the relay passes current (~1μA) for up to 155 min and, second, a hot cycling test where the relay survives for over 108 cycles . The NEMS relays are simulated using finite-element analysis, and the models are verified against experimental tests. Furthermore, the relays are configured and tested as a 2 : 1 multiplexer to show their potential as a digital logic component.
Keywords :
coatings; contact resistance; elemental semiconductors; finite element analysis; multiplexing equipment; nanoelectromechanical devices; oxidation; platinum; semiconductor device models; semiconductor device testing; semiconductor relays; silicon; stability; ON-resistance; Pt-Si; coating stability; contact resistance; contact-and-hold test; digital logic component; drain bias; electrical properties; finite-element analysis; hot cycling test; laterally actuated platinum-coated polysilicon NEM relays; laterally actuated polycrystalline silicon nanoelectromechanical relays; multiplexer; polysilicon surface oxidation; resistance 3 kohm; room ambient conditions; sidewall coating; voltage 0.1 V; voltage 3 V to 5 V; CMOS integrated circuits; Coatings; Force; Logic gates; Platinum; Power dissipation; Relays; Digital circuits; electrostatic devices; lateral actuation; nanoelectromechanical (NEM) systems; relay;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2013.2244779