DocumentCode
745896
Title
Multilevel monolithic inductors in silicon technology
Author
Soyuer, M. ; Burghartz, Joachim N. ; Jenkins, K.A. ; Ponnapalli, S. ; Ewen, J.F. ; Pence, W.E.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
31
Issue
5
fYear
1995
fDate
3/2/1995 12:00:00 AM
Firstpage
359
Lastpage
360
Abstract
Multilevel monolithic inductors implemented in standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4 GHz and above 6 at 900 MHz for a 2 nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps
Keywords
BiCMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; inductors; integrated circuit metallisation; silicon; 900 MHz to 2.4 GHz; Q-factor values; Si; Si technology; UHF MMIC; multilevel metallisation; multilevel monolithic inductors; standard BiCMOS technology; via shunts;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950241
Filename
369961
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