Title :
Multilevel monolithic inductors in silicon technology
Author :
Soyuer, M. ; Burghartz, Joachim N. ; Jenkins, K.A. ; Ponnapalli, S. ; Ewen, J.F. ; Pence, W.E.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/2/1995 12:00:00 AM
Abstract :
Multilevel monolithic inductors implemented in standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4 GHz and above 6 at 900 MHz for a 2 nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps
Keywords :
BiCMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; inductors; integrated circuit metallisation; silicon; 900 MHz to 2.4 GHz; Q-factor values; Si; Si technology; UHF MMIC; multilevel metallisation; multilevel monolithic inductors; standard BiCMOS technology; via shunts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950241
