Title :
Effect of temperature on frequency limits of GaAs/AlGaAs resonant tunnel diodes
Author :
Raven, M.S. ; Steenson, D.P. ; Chamberlain, J.M. ; Henini, M. ; Hughes, O.H.
Abstract :
The effect of temperature variations on the cutoff and self-resonance frequencies of GaAs/AlGaAs double barrier resonant tunnel diodes has been investigated. Using the static I/V characteristic curve the negative differential resistance was determined at different temperatures and the cutoff and self-resonance frequencies were calculated using a small-signal equivalent circuit model of the resonant tunnel diode. The results were compared with direct S-parameter measurements using a network analyser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling devices; semiconductor device models; solid-state microwave devices; tunnel diodes; GaAs-AlGaAs diodes; cutoff frequency; direct S-parameter measurements; double barrier resonant tunnel diodes; frequency limits; negative differential resistance; network analyser; self-resonant frequency; semiconductors; small-signal equivalent circuit model; static I/V characteristic curve;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920163
