DocumentCode
745984
Title
Observation of DC and microwave negative differential resistance in InAlAs/InGaAs/InP HEMTs
Author
Kruppa, W. ; Boos, J. Brad
Author_Institution
SFA Inc., Landover, MD, USA
Volume
28
Issue
3
fYear
1992
Firstpage
267
Lastpage
269
Abstract
Negative differential resistance, as evidenced by DC and microwave measurements, has been observed in InAlAs/InGaAs/InP HEMTs. This behaviour, which occurs at high drain voltages in short-gate-length devices, appears to be related to that observed in some other heterojunction field-effect transistors and is attributed to the real-space transfer of carriers from the channel into the donor layer.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; negative resistance; solid-state microwave devices; DC NDR; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; heterojunction field-effect transistors; high drain voltages; microwave NDR; microwave measurements; negative differential resistance; real-space transfer of carriers; semiconductors; short-gate-length devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920165
Filename
121416
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