• DocumentCode
    745996
  • Title

    SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition

  • Author

    Jalali, Bahram ; Levi, A.F.J. ; Ross, F. ; Fitzgerald, E.A.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    28
  • Issue
    3
  • fYear
    1992
  • Firstpage
    269
  • Lastpage
    271
  • Abstract
    Epitaxial Si/SiGe quantum well waveguide pin photodiodes are grown using rapid thermal chemical vapour deposition. Devices with area of 10*1000 mu m2 have a measured dark current of less than 10 pA at -5 V bias and an external quantum efficiency of approximately 5% at 1 Gbit/s for incident radiation of wavelength lambda =0.96 mu m.
  • Keywords
    Ge-Si alloys; chemical vapour deposition; optical interconnections; optical waveguide components; p-i-n diodes; photodiodes; semiconductor epitaxial layers; semiconductor quantum wells; -5 V; 0.96 micron; 1 Gbit/s; 10 micron; 10 pA; 1000 micron; 5 percent; Si-SiGe; SiGe waveguide photodetectors; bias; dark current; external quantum efficiency; quantum well waveguide pin photodiodes; rapid thermal chemical vapour deposition; wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920166
  • Filename
    121417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745996