Title :
Impact ionisation in Si bipolar devices
Author_Institution :
DRA Electron. Div., Malvern, UK
fDate :
3/2/1995 12:00:00 AM
Abstract :
A new theory of impact ionisation recently developed by the author is applied to breakdown in Si p-i-n diodes and collectors of advanced bipolar transistors. Nonlocal aspects dominate the ionisation on short length scales, and good agreement is achieved between the theory and published breakdown and multiplication data
Keywords :
bipolar transistors; electric breakdown; elemental semiconductors; impact ionisation; p-i-n diodes; silicon; PIN diodes; Si; Si bipolar devices; bipolar transistor collectors; breakdown; impact ionisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950257
