DocumentCode :
746069
Title :
High-Q, Ag-doped 123 resonator on unbuffered sapphire substrate
Author :
Easwar, K. ; Sarkar, B.K. ; Kumar, D. ; Hegde, M.S. ; Pinto, R. ; Apte, P.R.
Author_Institution :
Soc. for Applied Microwave Electron. Eng. & Res., IIT Campus, Bombay, India
Volume :
31
Issue :
5
fYear :
1995
fDate :
3/2/1995 12:00:00 AM
Firstpage :
374
Lastpage :
375
Abstract :
The microwave performance of an Ag-doped YBa2Cu3 O7-x thin-film X-band microstrip resonator on unbuffered sapphire substrate is reported. Q-values of 2400 and 1200 have been obtained at 15 K and 77 K, respectively, which correspond to R s values of 330 μΩ and 680 μΩ
Keywords :
Q-factor; barium compounds; high-temperature superconductors; microstrip resonators; sapphire; silver; superconducting microwave devices; superconducting resonators; superconducting thin films; yttrium compounds; 123 compound; 15 K; 330 muohm; 680 muohm; 77 K; Ag-doped YBa2Cu3O7-x thin-film X-band microstrip resonator; Al2O3; Q-values; YBa2Cu3O7:Ag; microwave performance; surface resistance; unbuffered sapphire substrate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950236
Filename :
369985
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=746069
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