Title :
Three-terminal Si/SiGe digital optoelectronic switch
Author :
Kovacic, S.J. ; Simmons, Jay G. ; Noel, Jean-Philippe ; Houghton, D.C. ; Buchanan, M.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The DC electrical and optical characteristics of a three-terminal Si/Si0.75Ge0.25 digital optoelectronic switch are presented. The device is found to have bistable electrical states; a high impedance (12 k Omega ) off state connected to a low impedance (50 Omega ) on state by a region of negative differential resistance. The current-voltage characteristics of the device are found to be nested towards lower switching voltage as the third terminal injection current is increased. With 2.0 mA of current injected into the active layer of the device, the switching voltage was decreased to 1.6 V from 3.7 V. Optical injection, concurrent with third-terminal injection, is also examined.
Keywords :
Ge-Si alloys; elemental semiconductors; negative resistance; optoelectronic devices; semiconductor materials; semiconductor switches; silicon; 1.6 V; 2 mA; DC electrical characteristics; DOES; Si-Si 0.75Ge 0.25; bistable electrical states; current-voltage characteristics; digital optoelectronic switch; double heterostructure optoelectronic switching; negative differential resistance; optical characteristics; switching voltage; third terminal injection current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920180
