Title :
Gated photodetector based on GaN/AlGaN heterostructure field effect transistor
Author :
Khan, M.A. ; Shur, M.S. ; Chen, Q. ; Kuznia, J.N. ; Sun, C.J.
Author_Institution :
APA Optics, APA Opt. Inc., Blaine, MN, USA
fDate :
3/2/1995 12:00:00 AM
Abstract :
The authors report a 0.2 μm gate GaN/AlGaN heterostructure field effect transistor which operates as a visible blind photodetector with responsivities as high as 3000 A/W for wavelengths from 200 to 365 nm. The responsivity falls by three orders of magnitude for wavelengths greater than 365 nm. Using a CW He-Cd laser (wavelength 325 nm), we measured a response time of order 0.2 ms. A model explaining the detector operation is in good agreement with the experimental data
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; photodetectors; ultraviolet detectors; 0.2 micron; 0.2 ms; 200 to 365 nm; GaN-AlGaN; HFET; UV detector; gated photodetector; heterostructure field effect transistor; model; response time; visible blind photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950247
