• DocumentCode
    746329
  • Title

    Physical model of threshold voltage in silicon MOS transistors including reverse short channel effect

  • Author

    Brut, H. ; Juge, A. ; Ghibaudo, G.

  • Author_Institution
    Central R&D, SGS-Thomson Microelectron., Crolles, France
  • Volume
    31
  • Issue
    5
  • fYear
    1995
  • fDate
    3/2/1995 12:00:00 AM
  • Firstpage
    411
  • Lastpage
    412
  • Abstract
    A physically based model for the MOSFET threshold voltage accounting for the reverse short channel effect is proposed. This threshold voltage model which incorporates the inhomogeneous transverse and longitudinal doping profiles as well as the conventional charge sharing short channel effect, has been successfully tested on several submicronic technologies with various channel lengths
  • Keywords
    MOSFET; doping profiles; semiconductor device models; 0.35 mum; 0.7 mum; MOS transistors; MOSFET; channel length; charge sharing short channel effect; inhomogeneous transverse doping profile; longitudinal doping profile; physical model; reverse short channel effect; submicronic technologies; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950233
  • Filename
    370011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=746329