Title :
Physical model of threshold voltage in silicon MOS transistors including reverse short channel effect
Author :
Brut, H. ; Juge, A. ; Ghibaudo, G.
Author_Institution :
Central R&D, SGS-Thomson Microelectron., Crolles, France
fDate :
3/2/1995 12:00:00 AM
Abstract :
A physically based model for the MOSFET threshold voltage accounting for the reverse short channel effect is proposed. This threshold voltage model which incorporates the inhomogeneous transverse and longitudinal doping profiles as well as the conventional charge sharing short channel effect, has been successfully tested on several submicronic technologies with various channel lengths
Keywords :
MOSFET; doping profiles; semiconductor device models; 0.35 mum; 0.7 mum; MOS transistors; MOSFET; channel length; charge sharing short channel effect; inhomogeneous transverse doping profile; longitudinal doping profile; physical model; reverse short channel effect; submicronic technologies; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950233
