Title :
An analytical method for two-dimensional field distribution of a MOS structure with a finite field plate
Author :
Chung, S.K. ; Yoo, D.C. ; Choi, Y.I.
Author_Institution :
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
1/1/1995 12:00:00 AM
Abstract :
An analytical method is presented for two-dimensional field distribution of a MOS structure with a field plate, which allows explicit equations for field components in terms of oxide thickness, depletion width, and field plate length. Useful design curves of breakdown voltage versus substrate impurity concentration with oxide thickness and plate length as parameters are provided
Keywords :
MIS devices; electric breakdown; electric fields; impurity distribution; MOS structure; analytical method; breakdown voltage; depletion width; design curves; field components; field plate length; finite field plate; oxide thickness; substrate impurity concentration; two-dimensional field distribution; Breakdown voltage; Design methodology; Dielectric substrates; Equations; Galois fields; Numerical analysis; P-n junctions; Permittivity; Semiconductor impurities; Strips;
Journal_Title :
Electron Devices, IEEE Transactions on
