• DocumentCode
    746356
  • Title

    Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

  • Author

    Pananakakis, G. ; Bauza, D. ; Reeson, K.J. ; Sealy, B.J.

  • Volume
    28
  • Issue
    3
  • fYear
    1992
  • Firstpage
    296
  • Lastpage
    298
  • Abstract
    The current/voltage characteristics of single crystal CoSi2 layers fabricated in
  • Keywords
    Schottky-barrier diodes; cobalt compounds; electric breakdown of solids; electron-hole recombination; elemental semiconductors; ion implantation; 0.64 eV; 100 to 300 K; 20 V; CoSi 2-Si; Schottky barrier diodes; barrier height; bulk recombination; current/voltage characteristics; high energy ion implantation; ideality factor; ion beam synthesised; mesa device structures; reverse breakdown voltage; single crystal CoSi 2 layers; wet chemical etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920183
  • Filename
    121434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=746356