DocumentCode
746370
Title
On the non-ideal characteristics of Schottky-Barrier-gate diodes in In0.52Al0.48As/In0.53Ga0.47 As heterostructure FET´s on InP substrates
Author
Sung, Roberto ; Das, Mukunda B.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Volume
42
Issue
1
fYear
1995
fDate
1/1/1995 12:00:00 AM
Firstpage
188
Lastpage
190
Abstract
We report results of determination of the zero-field barrier heights of Schottky-barrier-gate-diodes in InAlAs/InGaAs heterostructure modulation doped FET´s by exploiting their temperature dependent I-V characteristics. The field-emission model has been found to account for the gate current flow mechanism particularly at temperatures below 200 K. Using this model the influence of the InAlAs/InGaAs heterostructure potential barrier on the gate current has been delineated and a possible cause behind the current´s wide-range of variability, from 10-1 to 102 A/cm2 within 100 mV forward bias, has been suggested
Keywords
III-V semiconductors; Schottky diodes; aluminium compounds; characteristics measurement; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor heterojunctions; In0.52Al0.48As/In0.53Ga0.47 As heterostructure FET; InAlAs-InGaAs-InP; InP; InP substrates; Schottky-barrier-gate diodes; field-emission model; forward bias; gate current flow; heterostructure potential barrier; modulation doped FET; nonideal characteristics; temperature dependent I-V characteristics; zero-field barrier heights; Electronic equipment testing; Epitaxial layers; HEMTs; Indium compounds; Indium phosphide; MODFETs; Schottky barriers; Schottky diodes; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370018
Filename
370018
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