Title :
On the non-ideal characteristics of Schottky-Barrier-gate diodes in In0.52Al0.48As/In0.53Ga0.47 As heterostructure FET´s on InP substrates
Author :
Sung, Roberto ; Das, Mukunda B.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
1/1/1995 12:00:00 AM
Abstract :
We report results of determination of the zero-field barrier heights of Schottky-barrier-gate-diodes in InAlAs/InGaAs heterostructure modulation doped FET´s by exploiting their temperature dependent I-V characteristics. The field-emission model has been found to account for the gate current flow mechanism particularly at temperatures below 200 K. Using this model the influence of the InAlAs/InGaAs heterostructure potential barrier on the gate current has been delineated and a possible cause behind the current´s wide-range of variability, from 10-1 to 102 A/cm2 within 100 mV forward bias, has been suggested
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; characteristics measurement; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor heterojunctions; In0.52Al0.48As/In0.53Ga0.47 As heterostructure FET; InAlAs-InGaAs-InP; InP; InP substrates; Schottky-barrier-gate diodes; field-emission model; forward bias; gate current flow; heterostructure potential barrier; modulation doped FET; nonideal characteristics; temperature dependent I-V characteristics; zero-field barrier heights; Electronic equipment testing; Epitaxial layers; HEMTs; Indium compounds; Indium phosphide; MODFETs; Schottky barriers; Schottky diodes; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
