Title :
High-frequency operation of lateral hot-electron transistors
Author :
Ryzhii, Victor ; Khrenov, Gregory
Author_Institution :
Dept. of Comput. Hardware, Aizu Univ., Japan
fDate :
1/1/1995 12:00:00 AM
Abstract :
The high-frequency operation of a lateral hot-electron transistor (LHET) with near ballistic transport in the base and collector is considered. The high-frequency efficiency of the hot-electron transport in the base and collector are evaluated. It is shown that due to two-dimensional electron gas the high-frequency properties of the LHET collector are quite different from the properties of the hot-electron transistors with vertical structure
Keywords :
bipolar transistors; high field effects; high-frequency effects; hot electron transistors; two-dimensional electron gas; high-frequency efficiency; high-frequency operation; lateral hot-electron transistors; near ballistic transport; two-dimensional electron gas; vertical structure; Ballistic transport; Electron emission; Electron optics; Impurities; Optical scattering; Particle measurements; Phonons; Region 7; Resonant tunneling devices; Stimulated emission;
Journal_Title :
Electron Devices, IEEE Transactions on
