Negative Gate Transconductance in Gate/Source Overlapped Heterojunction Tunnel FET and Application to Single Transistor Phase Encoder

Author

Trivedi, Amit Ranjan ; Ahmed, Khondker Zakir ; Mukhopadhyay, Saibal

Author_Institution

Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

201

Lastpage

203

Abstract

Negative gate transconductance (NGT) is shown in gate/source overlapped heterojunction tunnel FET (SO-HTFET). At higher VGS, depletion region in the gate overlapped source region reduces the electric field along channel resulting in reduced band-to-band-tunneling and NGT. Application of SO-HTFET in designing a single transistor binary phase shift-keying with significantly reduced complexity is discussed.

Keywords

field effect transistors; phase coding; phase shift keying; tunnelling; NGT; SO-HTFET; band-to-band-tunneling; depletion region; gate overlapped source region; gate-source overlapped heterojunction tunnel FET; negative gate transconductance; single transistor binary phase shift-keying; single transistor phase encoder; Binary phase shift keying; Complexity theory; Field effect transistors; Heterojunctions; Logic gates; Transconductance; Tunnel FET; band-to-band-tunneling; negative gate transconductance; phase modulator;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2388533

Filename

7004147