Title :
Negative Gate Transconductance in Gate/Source Overlapped Heterojunction Tunnel FET and Application to Single Transistor Phase Encoder
Author :
Trivedi, Amit Ranjan ; Ahmed, Khondker Zakir ; Mukhopadhyay, Saibal
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Negative gate transconductance (NGT) is shown in gate/source overlapped heterojunction tunnel FET (SO-HTFET). At higher VGS, depletion region in the gate overlapped source region reduces the electric field along channel resulting in reduced band-to-band-tunneling and NGT. Application of SO-HTFET in designing a single transistor binary phase shift-keying with significantly reduced complexity is discussed.
Keywords :
field effect transistors; phase coding; phase shift keying; tunnelling; NGT; SO-HTFET; band-to-band-tunneling; depletion region; gate overlapped source region; gate-source overlapped heterojunction tunnel FET; negative gate transconductance; single transistor binary phase shift-keying; single transistor phase encoder; Binary phase shift keying; Complexity theory; Field effect transistors; Heterojunctions; Logic gates; Transconductance; Tunnel FET; band-to-band-tunneling; negative gate transconductance; phase modulator;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2388533
