Title :
A 10-Gb/s two-dimensional eye-opening monitor in 0.13-μm standard CMOS
Author :
Analui, Behnam ; Rylyakov, Alexander ; Rylov, Sergey ; Meghelli, Mounir ; Hajimiri, Ali
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
Abstract :
An eye-opening monitor (EOM) architecture that can capture a two-dimensional (2-D) map of the eye diagram of a high-speed data signal has been developed. Two single-quadrant phase rotators and one digital-to-analog converter (DAC) are used to generate rectangular masks with variable sizes and aspect ratios. Each mask is overlapped with the received eye diagram and the number of signal transitions inside the mask is recorded as error. The combination of rectangular masks with the same error creates error contours that overall provide a 2-D map of the eye. The authors have implemented a prototype circuit in 0.13-μm standard CMOS technology that operates up to 12.5 Gb/s at 1.2-V supply. The EOM maps the input eye to a 2-D error diagram with up to 68-dB mask error dynamic range. The left and right halves of the eyes are monitored separately to capture horizontally asymmetric eyes. The chip consumes 330 mW and operates reliably with supply voltages as low as 1 V at 10 Gb/s. The authors also present a detailed analysis that verifies if the measurements are in good agreement with the expected results.
Keywords :
CMOS analogue integrated circuits; adaptive equalisers; digital-analogue conversion; error statistics; high-speed integrated circuits; 0.13 micron; 1 V; 1.2 V; 10 Gbit/s; 12.5 Gbit/s; 2D eye-opening monitor; CMOS technology; bit error rate; digital-to-analog converter; high-speed data signal; rectangular masks; single-quadrant phase rotators; CMOS technology; Circuits; Digital-analog conversion; Dynamic range; Eyes; Low voltage; Monitoring; Prototypes; Signal analysis; Two dimensional displays; Bit error rate; CMOS; eye diagram; eye monitor; eye-opening monitor; high speed; mask error rate; signal quality;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.856576