Title :
An 80-Gb/s 231-1 pseudorandom binary sequence generator in SiGe BiCMOS technology
Author :
Dickson, Timothy O. ; Laskin, Ekaterina ; Khalid, Imran ; Beerkens, Rudy ; Xie, Jingqiong ; Karajica, Boris ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont., Canada
Abstract :
A 231-1 pseudorandom binary sequence (PRBS) generator with adjustable output data rates up to 80 Gb/s is reported in a production 130-nm BiCMOS process with 150-GHz fT SiGe heterojunction bipolar transistor (HBT). The pseudorandom sequence is generated at 20 Gb/s using a linear feedback shift register (FSR), which is then multiplexed up to 80 Gb/s with a 4:1 multiplexer. A BiCMOS logic family combining MOSFETs and SiGe HBTs on high-speed paths is employed throughout the PRBS generator to maximize building block switching speed. Adjustable delay cells are inserted into critical clock paths to improve timing margins throughout the system. The PRBS generator consumes 9.8 W from a 3.3-V supply and can deliver an output voltage swing of up to 430 mV single-ended at 80 Gb/s.
Keywords :
BiCMOS logic circuits; Ge-Si alloys; MOS logic circuits; binary sequences; bipolar logic circuits; random number generation; shift registers; 130 nm; 150 GHz; 20 Gbit/s; 3.3 V; 430 mV; 4:1 multiplexer; 80 Gbit/s; 9.8 W; BiCMOS logic family; BiCMOS technology; MOSFET; SiGe; heterojunction bipolar transistor; linear feedback shift register; pseudorandom binary sequence generator; BiCMOS integrated circuits; Binary sequences; Germanium silicon alloys; Heterojunction bipolar transistors; Linear feedback shift registers; Logic; Multiplexing; Production; Random sequences; Silicon germanium; BiCMOS; PRBS; SiGe HBT; clock distribution; current-mode logic;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.856578