Analysis of signal to noise ratio of photoconductive layered solid-state imaging device

Author

Matsunaga, Yoshiyulu ; Hatori, Fumitoshi ; Tango, Hiroyuki ; Yoshida, Okio

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

Volume

42

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

38

Lastpage

42

Abstract

The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise suppression effect due to residual signal electrons in the storage diode after read-out operation, the optical shot noise, and the fluctuation of the number of transferred signal electrons due to incomplete readout signal electrons were considered. The obtained result showed good agreement to the experimental result

Keywords

image sensors; integrated circuit noise; interference suppression; optical noise; photoconducting devices; semiconductor device noise; shot noise; S/N ratio; SNR; noise suppression effect; optical shot noise; photoconductive layered imaging device; read-out operation; residual signal electrons; signal/noise ratio; solid-state imaging device; storage diode; transferred signal electrons fluctuation; Diodes; Electron optics; Fluctuations; Optical imaging; Optical noise; Photoconducting devices; Photoconductivity; Signal analysis; Signal to noise ratio; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370038

Filename

370038