DocumentCode
746602
Title
Optical control and injection locking of monolithically integrated In0.53Ga0.47As/In0.52Al0.48 As MODFET oscillators
Author
Yang, David ; Bhattacharya, Pallab ; Lai, Richard ; Brock, Timothy ; Paolella, Arthur
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
42
Issue
1
fYear
1995
fDate
1/1/1995 12:00:00 AM
Firstpage
31
Lastpage
37
Abstract
Optical tuning and injection locking characteristics of MMIC oscillators made with InP-based 0.25 μm gate In0.53Ga0.47As/In0.52Al0.48 As modulation-doped field-effect transistors (MODFETs) have been investigated. Optical tuning has been performed on the X- and R-band oscillator circuits and a maximum tuning range of 8.7 MHz and 11.7 MHz, respectively, has been measured. The tuning characteristics have been explained in terms of changes in the MODFET characteristics with absorption of incident light. Direct optical subharmonic injection locking of these oscillator circuits have been done at 10 and 19 GHz, which are the highest achieved for InP-based MMIC´s
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; circuit tuning; field effect MMIC; gallium arsenide; indium compounds; injection locked oscillators; microwave oscillators; variable-frequency oscillators; 0.25 micron; 10 GHz; 19 GHz; In0.53Ga0.47As-In0.52Al0.48 As; MMIC oscillators; MODFET oscillators; R-band oscillator circuits; SHF; X-band oscillator circuits; incident light absorption; injection locking characteristics; modulation-doped FET; monolithically integrated oscillators; optical control; optical subharmonic injection locking; optical tuning; Circuit optimization; Epitaxial layers; FETs; Field effect MMICs; HEMTs; Injection-locked oscillators; MODFET circuits; MODFET integrated circuits; Optical control; Optical tuning;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370039
Filename
370039
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