Title :
A physics-based HBT SPICE model for large-signal applications
Author :
Feng, J.J.X. ; Pulfrey, D.L. ; Sitch, J. ; Surridge, R.
Author_Institution :
Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
fDate :
1/1/1995 12:00:00 AM
Abstract :
A new, physics-based, large-signal SPICE model for graded-base HBT´s is reported. The novelty of the model lies in its use of the emitter-base diode ideality factor to account for the voltage dependencies of the tunneling factor and the barrier height for back injection of electrons. This expedient allows the HBT to be simply represented in SPICE by the regular homojunction BJT macromodule of this stimulator. The usefulness and accuracy of the model are demonstrated by comparisons of simulated and measured data for a graded-base AlGaAs-GaAs HBT: DC I-V data and large-signal switching results from a ring-oscillator circuit are presented
Keywords :
SPICE; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; tunnelling; barrier height; electron back injection; emitter-base diode ideality factor; graded-base HBT; homojunction BJT macromodule; large-signal applications; physics-based HBT SPICE model; stimulator; tunneling factor; voltage dependencies; Circuit simulation; Communication switching; Diodes; Heterojunction bipolar transistors; Predictive models; SPICE; Solid modeling; Switching circuits; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
