DocumentCode :
74664
Title :
Design and Performance of High-Speed Avalanche Photodiodes for 100-Gb/s Systems and Beyond
Author :
Nada, Masahiro ; Yoshimatsu, Toshihide ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Matsuzaki, Hideaki
Author_Institution :
NTT Device Technol. Labs., NTT Corp., Atsugi, Japan
Volume :
33
Issue :
5
fYear :
2015
fDate :
March1, 1 2015
Firstpage :
984
Lastpage :
990
Abstract :
This paper reviews our work on high-speed avalanche photodiodes (APDs) with a unique vertical-illumination structure, targeting 100-Gb/s systems and beyond. The APDs feature easy lateral and vertical scaling for achieving the required operation speed and responsivity. For 100-Gb/s systems, a 3-dB bandwidth of 18.5 GHz with multiplied responsivity of 9.1 A/W is obtained. For larger capacity applications such as 400-Gb/s systems, a maximum 3-dB bandwidth of over 35 GHz and responsivity at a gain of unity of almost 0.7 A/W are obtained by reducing diameter of an n-contact mesa and optimizing thickness and configuration of an absorption layer.
Keywords :
avalanche photodiodes; APD; absorption layer; avalanche photodiode; bandwidth 18.5 GHz; multiplied responsivity; n-contact mesa; vertical scaling; vertical-illumination structure; Absorption; Optical device fabrication; Optical receivers; Optical sensors; Optical waveguides; Sensitivity; 100 Gb/s; 100 Gbit/s; 400 Gb/s; 400 Gbit/s; Avalanche Photodiode (APD); Avalanche photodiode (APD);
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2014.2377034
Filename :
6974978
Link To Document :
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