Design and Performance of High-Speed Avalanche Photodiodes for 100-Gb/s Systems and Beyond

Author

Nada, Masahiro ; Yoshimatsu, Toshihide ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Matsuzaki, Hideaki

Author_Institution

NTT Device Technol. Labs., NTT Corp., Atsugi, Japan

Volume

33

Issue

5

fYear

2015

fDate

March1, 1 2015

Firstpage

984

Lastpage

990

Abstract

This paper reviews our work on high-speed avalanche photodiodes (APDs) with a unique vertical-illumination structure, targeting 100-Gb/s systems and beyond. The APDs feature easy lateral and vertical scaling for achieving the required operation speed and responsivity. For 100-Gb/s systems, a 3-dB bandwidth of 18.5 GHz with multiplied responsivity of 9.1 A/W is obtained. For larger capacity applications such as 400-Gb/s systems, a maximum 3-dB bandwidth of over 35 GHz and responsivity at a gain of unity of almost 0.7 A/W are obtained by reducing diameter of an n-contact mesa and optimizing thickness and configuration of an absorption layer.

Keywords

avalanche photodiodes; APD; absorption layer; avalanche photodiode; bandwidth 18.5 GHz; multiplied responsivity; n-contact mesa; vertical scaling; vertical-illumination structure; Absorption; Optical device fabrication; Optical receivers; Optical sensors; Optical waveguides; Sensitivity; 100 Gb/s; 100 Gbit/s; 400 Gb/s; 400 Gbit/s; Avalanche Photodiode (APD); Avalanche photodiode (APD);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2014.2377034

Filename

6974978