DocumentCode
746649
Title
(Al0.7Ga0.3)0.5In0.5 P/In0.15Ga0.85As/Ga As heterostructure field effect transistors with very thin highly p-doped surface layer
Author
Dickmann, Jürgen ; Berg, Michael ; Geyer, Arthur ; Däembkes, Heinrich ; Scholz, Ferdinand ; Moser, Michael
Author_Institution
Res. Center, Daimler-Benz AG, Ulm, Germany
Volume
42
Issue
1
fYear
1995
fDate
1/1/1995 12:00:00 AM
Firstpage
2
Lastpage
7
Abstract
(Al0.7Ga0.3)0.5In0.5 P/In0.15Ga0.85As/Ga As Heterostructure Field Effect Transistors (HFETs) were realized for the first time using low pressure metal organic chemical vapor deposition on GaAs substrates. Maximum extrinsic transconductance and saturation current of gm =368 mS/mm and IDS=326 mA/mm were measured, respectively, for a device with a gate length of LG=0.35 μm. Although using self-aligned ohmic contacts, the devices showed very small output conductance of gd⩽10 mS/mm and high gate-drain breakdown voltage of VBrGD=19 V. The cut-off frequencies were determined to be fT=52 GHz and fmax =120 GHz
Keywords
III-V semiconductors; aluminium compounds; electric breakdown; field effect transistors; gallium arsenide; heavily doped semiconductors; indium compounds; millimetre wave field effect transistors; vapour phase epitaxial growth; 0.35 micron; 120 GHz; 19 V; 368 mS/mm; 52 GHz; AlGaInP-InGaAs-GaAs; EHF; GaAs; GaAs substrates; HFET; MM-wave operation; chemical vapor deposition; cutoff frequencies; gate-drain breakdown voltage; heterostructure field effect transistors; highly p-doped surface layer; low pressure MOCVD; maximum extrinsic transconductance; metal organic CVD; output conductance; saturation current; self-aligned ohmic contacts; Chemical vapor deposition; Current measurement; Cutoff frequency; Gallium arsenide; HEMTs; Length measurement; MODFETs; Ohmic contacts; Organic chemicals; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370043
Filename
370043
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