A model for the performance analysis and design of waveguide p-i-n photodetectors

Author

Das, Nikhil Ranjan ; Deen, M. Jamal

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

Volume

52

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

465

Lastpage

472

Abstract

A model to investigate the frequency response of waveguide (WG) p-i-n photodetectors (PDs) is presented. The model is based on the 2-D position-dependent distribution of carriers in the device and the results show that the contribution to the total current mainly comes from a small length of the PD measured from its input end. The effect of carrier trapping at a heterointerface has also been considered to study the frequency dependence of the photocurrent at low-bias voltages. The frequency response and bandwidth obtained from the model are in good agreement with published experimental results. A simplified and approximate relation for the fiber-to-WG coupling efficiency has also been used to calculate the overall quantum-efficiency of WGPDs. Then, the effect of WG geometry on the bandwidth-quantum efficiency product has been analyzed and some results on the optimum design of a WG p-i-n PD for maximum bandwidth-quantum efficiency product have been tabulated.

Keywords

carrier density; frequency response; optical waveguide components; p-i-n photodiodes; photodetectors; semiconductor device models; 2D carrier distribution; analytical photodetector modeling; bandwidth efficiency product; bandwidth-quantum efficiency product; carrier trapping; fiber-coupling; fiber-to-WG coupling efficiency; frequency dependence; frequency response; heterointerface trapping; high-speed photodetectors; low-bias voltage; photocurrent; quantum efficiency product; waveguide geometry; waveguide p-i-n photodetectors; waveguide photodetectors; waveguide photodiodes; Current measurement; Frequency dependence; Frequency response; Length measurement; PIN photodiodes; Performance analysis; Photoconductivity; Photodetectors; Position measurement; Voltage; Analytical modeling of photodetectors; bandwidth/quantum efficiency product; carrier distribution; coupling efficiency; fiber-coupling; heterointerface trapping; high-speed photodetectors; modeling of photodetectors; optimization; p-i-n photodetectors; photodetectors; photodiodes; quantum efficiency; two-dimensional (2-D) distribution; waveguide (WG)-fed photodetectors (PDs); waveguide photodetectors (WGPD); waveguide photodiodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.845152

Filename

1408146