Title :
Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes
Author :
Hoffman, Darin ; Gin, Aaron ; Wei, Yajun ; Hood, Andrew ; Fuchs, Frank ; Razeghi, Manijeh
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; infrared detectors; minority carriers; photodiodes; semiconductor superlattices; 220 to 325 K; 5 mum; InAs-GaSb; InAs-GaSb photodiodes; Shockley-Read-Hall centers; absorbing layer; binary type-II photodiodes; capture cross section; infrared photodiodes; luminescence efficiency; midwavelength photodiodes; minority carrier extraction; negative luminescence; nonradiative recombination; positive luminescence; quantum efficiency; superlattice photodiodes; temperature dependent measurements; Coatings; Diodes; Luminescence; Photodiodes; Radiative recombination; Superlattices; Temperature dependence; Temperature distribution; Temperature measurement; Wavelength measurement; Electroluminescence; negative luminescence; semiconductor device radiation effects;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.858783
