On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors

Author

Polsky, Boris ; Penzin, Oleg ; Sayed, Karim El ; Schenk, Andreas ; Wettstein, Andreas ; Fichtner, Wolfgang

Author_Institution

Synopsys Inc., Mountain View, CA, USA

Volume

52

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

500

Lastpage

506

Abstract

We show that the negative differential resistance in the I_d-V_ds characteristics observed in hydrodynamic transport simulations of partially depleted silicon-on-insulator MOSFETs disappears if the nonlocality of tunneling effects are properly accounted for in the recombination-generation process.

Keywords

MOSFET; hydrodynamics; semiconductor device models; silicon-on-insulator; transport processes; tunnelling; MOS devices; Si; hydrodynamic simulation; hydrodynamic transport simulation; negative differential resistance; partially depleted SOI transistors; partially depleted silicon-on-insulator MOSFET; recombination-generation process; simulation software; tunneling effects; CMOS technology; Hydrodynamics; Immune system; Impact ionization; MOS devices; MOSFETs; Predictive models; Silicon on insulator technology; Tunneling; Very large scale integration; MOS devices; Modeling; Simulation software; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.845074

Filename

1408150