An improved analytical solution of energy balance equation for short-channel SOI MOSFET´s and transverse-field-induced carrier heating

Author

Omura, Yasuhisa

Author_Institution

NTT LSI Labs., Atsugi, Japan

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

301

Lastpage

306

Abstract

This paper presents a method for solving the one-dimensional (1-D) energy balance equation for fully depleted short-channel SOI MOSFET´s. This method takes the exact kinetic energy into account and provides a new analytical solution for the non-saturated drain current region. The carrier temperature for spatially homogeneous case is described as a function of the longitudinal electric field and the carrier concentration deviation. The electron temperature is higher than that predicted by old models, which is examined by the two-dimensional simulation. The experimental data on gate current characteristics in short-channel SOI nMOSFET´s can be physically interpreted by the proposed 1-D model

Keywords

MOSFET; carrier density; semiconductor device models; silicon-on-insulator; carrier concentration deviation; carrier temperature; electron temperature; energy balance equation; exact kinetic energy; gate current characteristics; longitudinal electric field; nonsaturated drain current region; short-channel SOI MOSFETs; transverse-field-induced carrier heating; two-dimensional simulation; Electrons; Equations; Heating; Hot carriers; Kinetic energy; MOSFET circuits; Predictive models; Silicon; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370065

Filename

370065