Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model

Author

de Graaff, H.C. ; Kloosterman, W.J.

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

274

Lastpage

282

Abstract

A new model description for the behaviour of epitaxial collectors in bipolar transistors is given. This is part of MEXTRAM, a compact model for circuit simulation, and it gives the voltage drop and stored minority carrier charge in the collector epilayer as a function of the bias conditions. It covers (total) depletion and quasi-saturation for both ohmic and space charge conditions in the end region of the epilayer. New features are that the collector current and stored charge are given as explicit analytical functions, thus guaranteeing continuity also for their derivatives, and that collector current spreading is taken into account

Keywords

bipolar transistors; circuit analysis computing; hot carriers; semiconductor device models; space charge; MEXTRAM model; bias conditions; bipolar transistor; circuit simulation model; collector current spreading; collector epilayer modelling; depletion; epitaxial collectors; ohmic conditions; quasi-saturation; space charge conditions; stored minority carrier charge; voltage drop; Bipolar transistors; Circuit simulation; Circuit synthesis; Circuit testing; Electron mobility; Hot carriers; Numerical models; Semiconductor process modeling; Space charge; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370069

Filename

370069