Precise extraction of emitter resistance from an improved floating collector measurement

Author

Morizuka, Kouhei ; Hidaka, Osamu ; Mochizuki, Hiroshi

Author_Institution

Mater. & Devices Lab., Toshiba Res. & Dev. Center, Kawasaki, Japan

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

266

Lastpage

273

Abstract

A distributed transistor model is developed which comprehensively explains the non-linear characteristics of floating collector measurements. The non-linearity is attributed to the fact that the intrinsic collector current is not zero when the collector terminal is opened. Based on this understanding, a new procedure to extract emitter resistance is proposed. Combining the measurements of forward and reverse current gains and intrinsic base sheet resistance, the ambiguity in the conventional floating collector measurement is diminished and hence the accuracy is significantly improved

Keywords

bipolar transistors; electric resistance measurement; equivalent circuits; semiconductor device models; semiconductor device testing; distributed transistor model; emitter resistance extraction; floating collector measurement; forward current gain; intrinsic base sheet resistance; nonlinear characteristics; reverse current gain; Bipolar transistors; Current measurement; Current-voltage characteristics; Diodes; Electrical resistance measurement; Gain measurement; Helium; Proximity effect; Region 4; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370070

Filename

370070