Monolithic CCD imagers in HgCdTe

Author

Wadsworth, Mark V. ; Borrello, Sebastian R. ; Dodge, John ; Gooch, Roland ; McCardel, William ; Nado, George ; Shilhanek, Michael D.

Author_Institution

Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

244

Lastpage

250

Abstract

Charge-coupled device (CCD) infrared detector arrays in 5 μm cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic 128 by 28 element CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Operation of these devices at 77 K have produced average detectivity values exceeding 3×10¹³ cm-Hz^1/2/W for a background flux level of 6×10¹² photon/cm²-sec in the 3.0 μm to 5.5 μm spectral band. Overall performance data indicates the monolithic HgCdTe CCD to be a promising alternative to present midwave infrared hybrid focal plane array technology

Keywords

CCD image sensors; II-VI semiconductors; cadmium compounds; infrared detectors; infrared imaging; mercury compounds; 3 to 5.5 micron; 77 K; HgCdTe; IR detector chip; buffer amplification; charge-coupled device; charge-to-voltage conversion; infrared detector arrays; low background applications; monolithic CCD imagers; serial readout multiplexing; time delay/integrate detection; Charge coupled devices; Diodes; Doping; Infrared detectors; Infrared imaging; Integrated circuit interconnections; MISFETs; Parasitic capacitance; Radiation detectors; Sensor arrays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370073

Filename

370073