Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model

Author

Ashour, Iman S. ; El Kadi, Hatem ; Sherif, Khaled ; Vilcot, Jean-Pierre ; Decoster, Didier

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, Domaine Univ. Sci., Villeneuve d´´Ascq, France

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

231

Lastpage

238

Abstract

Using a 2-D bipolar physical model we highlight the main parameters that govern the long-wavelength MSM PD performance (cutoff frequency and responsivity). This covers applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also report that using a backside illumination technique and a thin absorbing layer we can reach a cutoff frequency as high as 65 GHz with a responsivity of 0.2 A/W

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; semiconductor device models; semiconductor heterojunctions; 2D bipolar physical model; 65 GHz; AlInAs-GaInAs; MSM PD; absorbing layer thickness; applied potential; backside illumination technique; cutoff frequency; electrode spacing; heterojunction effect; long-wavelength performance; photodiode; responsivity limitation; two dimensional model; Analytical models; Bandwidth; Cutoff frequency; Electrodes; Heterojunctions; Indium gallium arsenide; Lighting; Optical fiber communication; Photodiodes; Poisson equations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370075

Filename

370075